The Effects of Gadolinium Incorporation Into Indium-Zinc-Oxide Thin-Film Transistors

초록

We investigated the effects of gadolinium (Gd) incorporation into indium-zinc-oxide (IZO) thin-film transistors (TFTs) using radio-frequency cosputtering of IZO and Gd. A gadolinium-indium-zinc-oxide (Gd-IZO) TFT with 2.4 at.% Gd content had saturation-mode field-effect mobility, threshold voltage, and switching ratio (on current/off current) of 6.6 cm(2)V(-1)s(-1), 1.04 V, and on the order of 10(7), respectively, after thermal annealing at 250 degrees C. A Gd-IZO TFT with 2.4 at.% Gd content showed better switching performance and thermal stability than pure IZO TFTs due to stable ionic bond between Gd and O.

키워드